Progressive failure site generation in AlGaN/GaN high electron mobility transistors under OFF-state stress: Weibull statistics and temperature dependence

Progressive failure site generation in AlGaN/GaN high electron mobility transistors under OFF-state stress: Weibull statistics and temperature

Effects of hydrostatic pressure and temperature on the AlGaN/GaN High electron mobility transistors

In this paper, drain-source current, transconductance and cutoff frequency in AlGaN/GaN high electron mobility transistors have been investigated. In order to obtain parameters of exact AlGaN/GaN high electron mobility transistors such as electron density, the wave function, band gap, polarization charge, effective mass and dielectric constant, the hydrostatic pressure and temperature effects a...

Electrical and structural degradation of GaN high electron mobility transistors under high-power and high-temperature Direct Current stress

Articles you may be interested in Time evolution of off-state degradation of AlGaN/GaN high electron mobility transistors Appl. On the link between electroluminescence, gate current leakage, and surface defects in AlGaN/GaN high electron mobility transistors upon off-state stress Appl. Spatial distribution of structural degradation under high-power stress in AlGaN/GaN high electron mobility tra...

Implications of gate-edge electric field in AlGaN/GaN high electron mobility transistors during OFF-state degradation

Gate degradation in high electron mobility transistors (HEMTs) under OFF-state stress results from the high electric field near the gate edge. We investigate the evolution of this field over time in AlGaN/ GaN HEMTs upon OFF-state stress using a combination of electroluminescence (EL) microscopy and spectroscopy. EL analysis suggests that the electric field at the sites of generated surface def...

In-Situ Characterization of the Evolution of Defects in AlGaN/GaN HEMTs in the On-state and Off-state condition

Nitride semiconductors offer many unique and beneficial properties for new generation electronic devices [1]. GaN-based HEMTs are contenders for replace existing Si and GaAs devices in high-power RF applications. AlGaN/GaN High Election Mobility Transistors (HEMTs) are devices designed for applications where high-power and high-frequency devices are needed. AlGaN/GaN HEMTs take advantage of a t...